|Pulse width & Duty factor||Voltage
|1.2||1.4||300||17||72||300µs, 10%||50||Input & Output||PL44C1|
IGN1214M300 and IGN1214M300S are high power GaN-on-SiC RF power transistors that have been designed specifically for use in L- band radar systems. They operate over the full bandwidth of 1.20 - 1.40 GHz. They supply a minimum of 300W of peak output power, with typically >17 dB of gain and 70% efficiency. They operate from a 50V supply voltage.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.