IGN1214M300 L-Band, GaN/SiC, RF Power Transistor

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width & Duty factor Voltage
(V)
Matching Package
1.2 1.4 300 16 72 300µs, 10% 50 Input & Output PL44C1

IGN1214M300

IGN1214M300 and IGN1214M300S are high power GaN-on-SiC RF power transistors that have been designed specifically for use in L- band radar systems. They operate over the full bandwidth of 1.20 - 1.40 GHz. They supply a minimum of 300W of peak output power, with typically >16 dB of gain and 70% efficiency. They operate from a 50V supply voltage.

FEATURES

  • GaN on SiC HEMT Technology
  • RoHS and REACH Compliant
  • Output Power >300 W
  • IGN1214M300 has a bolt-down flange, IGN1214M300S is the earless flange option
  • Pre-matched Input & Output Impedance
  • Very high thermal conductivity flange
  • High Efficiency - >70%
  • 100% RF Tested

APPLICATIONS

  • L-band Radar Systems

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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