IGN1214M600 L-Band Radar Transistor Offering 600W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width & Duty factor Voltage
(V)
Matching Package
1.2 1.4 600 19.6 70 150µs, 10% 50 Input PL64A1

Image for Integra Part Number IGN1214M600

Image for Integra Part Number IGN1214M600

IGN1214M600 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of modern long-pulse, long-range radar systems. It supplies a minimum of 600 W of peak output power, with typically >19 dB of gain and 70% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxysealed ceramic lid.

FEATURES

  • GaN on SiC HEMT Technology
  • Output Power >600 W
  • Pre-matched Input Impedance
  • High Efficiency - typically 70%
  • 100% RF Tested Under 150µs, 10% duty cycle pulse conditions
  • RoHS and REACH Compliant

APPLICATIONS

  • L-Band Radar

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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