IGN1214M600 L-Band Radar Transistor Offering 600W
| Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 1.2 | 1.4 | 600 | 19.6 | 70 | 150µs, 10% | 50 | Input | PL64A1 |
IGN1214M600 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of modern long-pulse, long-range radar systems. It supplies a minimum of 600 W of peak output power, with typically >19 dB of gain and 70% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxysealed ceramic lid.
FEATURES
- GaN on SiC HEMT Technology
- Output Power >600 W
- Pre-matched Input Impedance
- High Efficiency - typically 70%
- 100% RF Tested Under 150µs, 10% duty cycle pulse conditions
- RoHS and REACH Compliant
APPLICATIONS
- L-Band Radar
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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