|Pulse width & Duty factor||Voltage|
IGN1315M650 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of modern radar systems. It supplies a minimum of 650W of peak output power, with typically >18 dB of gain and 60% efficiency. It operates from a 60 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.