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IGN1315M650 GaN Transistor for L-Band Radar Operating at 1.3-1.5 GHz

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse  width & Duty factorVoltage
(V)
MatchingPackage
1.301.45650 18 60 300µs, 10%60InputPL84A1
IGN1315M650

IGN1315M650 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of modern radar systems. It supplies a minimum of 650W of peak output power, with typically >18 dB of gain and 60% efficiency. It operates from a 60 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

  • GaN on SiC HEMT Technology
  • Output Power >650W
  • Pre-matched Input and Output Impedances
  • High Efficiency - up to 60% • 100% RF Tested Under 300ms, 10% duty cycle pulse conditions
  • RoHS and REACH Compliant

APPLICATIONS

  • L-band Radar Systems

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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