IGN2429M400 S-Band Radar Transistor Offering 400W
| Frequency Low (GHz) | Frequency High (GHz) | Output Power (W) | Gain (dB) | Efficiency (%) | Pulse width & Duty factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 2.40 | 2.90 | 400 | 13 | 50 | 300µs, 10% | 48 | Input & Output | PL84A1 |
IGN2429M400 is a high power GaN transistor best suited for S-band radar applications. Specified for use under Class AB operation, this transistor offers 2.4 - 2.9 GHz of operating frequency, minimum of 400W of peak pulse power, 48V and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
FEATURES
- GaN on SiC HEMT Technology
- 400W Output Power
- Class AB Operation
- Pre-matched Internal Impedance
- 100% High Power RF Tested
- Negative Gate Voltage/Bias Sequencing
APPLICATIONS
- S-Band Radar
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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