IGN2729M200 S-Band, GaN/SiC, RF Power Transistor

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width & Duty factor Voltage
(V)
Matching Package
2.7 2.9 200 18 65 100μs, 10% 50 Input PL32A1

IGN2729M200

IGN2729M200 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of modern radar systems. It supplies 200W of peak output power, with typically >18 dB of gain and 65% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

  • GaN on SiC HEMT Technology
  • RoHS and REACH Compliant
  • Output Power 200W
  • Full non-linear electrothermal model available, please contact the factory.
  • Pre-matched Input Impedance
  • High Efficiency - 65% typical
  • 100% RF Tested Under 100μs, 10% duty cycle pulse condition

APPLICATIONS

  • S-band Radar Systems

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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