IGN2729M400 S-Band Radar Transistor Operating at 2.7-2.9 GHz

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width & Duty factor Voltage
(V)
Matching Package
2.7 2.9 440 11 58 300µs, 10% 50 Input & Output PL64A1

Image for Integra Part Number IGN2729M400

GN2729M400 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of modern radar systems. It supplies a minimum of 400W of peak output power, with typically >11 dB of gain and 58% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

  • GaN on SiC HEMT Technology
  • Output Power >400W
  • Class AB Operation
  • Pre-matched Input and Output Impedances
  • High Efficiency - 58% typical
  • 100% RF Tested Under 300µs, 10% duty cycle pulse conditions
  • RoHS and REACH Compliant

APPLICATIONS

  • S-Band Radar

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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