IGN2729M400R2 S-Band, GaN/SiC, RF Power Transistor

Frequency Low
Frequency High
Output Power
Pulse width & Duty factor Voltage
Matching Package
2.7 2.9 400 18 63 100µs, 10% 50 Input & Output PL44C1

Image for Integra Part Number IGN2729M400R2

IGN2729M400R2 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of modern radar systems. It supplies 400W of peak output power, with typically >18 dB of gain and 63% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.


  • GaN on SiC HEMT Technology
  • Output Power 400W
  • Pre-matched Input and Output Impedances
  • High Efficiency - 63% typical
  • 100% RF Tested Under 100ms, 10% duty cycle pulse conditions
  • RoHS and REACH Compliant


  • S-band Radar Systems


  • EAR99

For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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