IGN2729M400R2 S-Band, GaN/SiC, RF Power Transistor
| Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 2.7 | 2.9 | 400 | 18 | 63 | 100µs, 10% | 50 | Input & Output | PL44C1 |
IGN2729M400R2 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of modern radar systems. It supplies 400W of peak output power, with typically >18 dB of gain and 63% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.
FEATURES
- GaN on SiC HEMT Technology
- Output Power 400W
- Pre-matched Input and Output Impedances
- High Efficiency - 63% typical
- 100% RF Tested Under 100ms, 10% duty cycle pulse conditions
- RoHS and REACH Compliant
APPLICATIONS
- S-band Radar Systems
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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