Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching | Package |
---|---|---|---|---|---|---|---|---|
2.7 | 2.9 | 400 | 17.5 | 63 | 300µs, 10% | 50 | Input & Output | PL44C1 |
IGN2729M400R3 and IGN2729M400R3S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of modern radar systems. They supply 400W of peak output power, with typically >17.5 dB of gain and 63% efficiency. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy sealed ceramic lid.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
Please enter the information to the left and we will email the requested model for Product: IGN2729M400R3.
If you wish to receive product updates and news from Integra, please check the appropriate box on the form.
Thank you for choosing Integra.