|Pulse width & Duty factor||Voltage
|2.7||2.9||400||17.5||63||300µs, 10%||50||Input & Output||PL44C1|
IGN2729M400R3 and IGN2729M400R3S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of modern radar systems. They supply 400W of peak output power, with typically >17.5 dB of gain and 63% efficiency. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy sealed ceramic lid.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.