IGN2729M400R3 S-Band, GaN/SiC, RF Power Transistor
| Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 2.7 | 2.9 | 400 | 17.5 | 63 | 300µs, 10% | 50 | Input & Output | PL44C1 |
IGN2729M400R3 and IGN2729M400R3S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of modern radar systems. They supply 400W of peak output power, with typically >17.5 dB of gain and 63% efficiency. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy sealed ceramic lid.
FEATURES
- GaN on SiC HEMT Technology
- High Efficiency - 63% typical
- RoHS and REACH Compliant
- 100% RF Tested Under 100µs, 10% duty cycle pulse conditions
- Output Power 400W
- IGN2729M400R3 has a bolt-down flange, IGN2729M400R3S is the earless flange option
- Pre-matched Input and Output Impedances
APPLICATIONS
- S-band Radar Systems
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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