IGN2729M400R3 S-Band, GaN/SiC, RF Power Transistor

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width & Duty factor Voltage
(V)
Matching Package
2.7 2.9 400 17.5 63 300μs, 10% 50 Input & Output PL44C1

IGN2729M400R3

IGN2729M400R3 and IGN2729M400R3S are high power GaN-on-SiC RF power transistors that have been designed to suit the unique needs of modern radar systems. They supply 400W of peak output power, with typically >17.5 dB of gain and 63% efficiency. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy sealed ceramic lid.

FEATURES

  • GaN on SiC HEMT Technology
  • High Efficiency - 63% typical
  • RoHS and REACH Compliant
  • 100% RF Tested Under 100µs, 10% duty cycle pulse conditions
  • Output Power 400W
  • IGN2729M400R3 has a bolt-down flange, IGN2729M400R3S is the earless flange option
  • Pre-matched Input and Output Impedances

APPLICATIONS

  • S-band Radar Systems

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

Integra

Get our Updates:



Privacy Policy


Integra Technologies
© 1997 - 2019 Integra Technologies, Inc. All Rights Reserved
Get our Updates