|Pulse width & Duty factor||Voltage
|2.7||2.9||500||12||60||300µs, 10%||50||Input & Output||PL84A1|
IGN2729M500 is a high power GaN transistor, best suited for S-band radar applications. Specified for use under Class AB operation, this transistor operates at 2.7 - 2.9 GHz of operating frequency, a minimum of 500W of peak output power, 12dB gain, and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.