Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching | Package |
---|---|---|---|---|---|---|---|---|
2.7 | 3.0 | 65 | 14.5 | 60 | 300µs, 20% | 32 | Input & Output | PL32A1 |
IGN2730M65 is a high power GaN transistor, best suited for S-band radar applications. Specified for use under Class AB operation, this transistor operates at 2.7-3.0 GHz of operating frequency, a minimum of 65W of peak output power, 32V and 20% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
Please enter the information to the left and we will email the requested model for Product: IGN2730M65.
If you wish to receive product updates and news from Integra, please check the appropriate box on the form.
Thank you for choosing Integra.