IGN2730M65 S-Band Radar Transistor Operating at 2.7-3.0 GHz
| Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 2.7 | 3 | 65 | 15 | 58 | 300µs, 20% | 32 | Input & Output | PL32A1 |
IGN2730M65 is a high power GaN transistor, best suited for S-band radar applications. Specified for use under Class AB operation, this transistor operates at 2.7-3.0 GHz of operating frequency, a minimum of 65W of peak output power, 32V and 12% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
FEATURES
- GaN on SiC HEMT Technology
- 65W Output Power
- Class AB Operation
- Pre-matched Internal Impedance
- 100% High Power RF Tested
- Negative Gate Voltage/Bias Sequencing
APPLICATIONS
- S-Band Radar
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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