IGN2731M250 S-Band, GaN/SiC, RF Power Transistor

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width & Duty factor Voltage
(V)
Matching Package
2.7 3.1 250 17.5 63% 300µs, 10% 40 PL44C1

Image for Integra Part Number IGN2731M250

IGN2731M250 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of modern radar systems. It supplies 250W of peak output power, with typically >17.5 dB of gain and 63% efficiency. It operates from a 40 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

  • GaN on SiC HEMT Technology
  • RoHS and REACH Compliant
  • Output Power 250W
  • Pre-matched Input and Output Impedances
  • High Efficiency - 63% typical
  • 100% RF Tested Under 300ms, 10% duty cycle pulse conditions

APPLICATIONS

  • S-band Radar Systems

EXPORT STATUS



For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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