|Pulse width & Duty factor||Voltage
IGN2731M250 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of modern radar systems. It supplies 250W of peak output power, with typically >17.5 dB of gain and 63% efficiency. It operates from a 40 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.