|Pulse width & Duty factor||Voltage
|2.7||3.1||80||13.5||60||100µs, 10%||40||Input & Output||PL32A1|
IGN2731M80 is a high power GaN transistor, best suited for S-band radar applications. Specified for use under Class AB operation, this transistor operates at 2.7-3.1 GHz of operating frequency, a minimum of 80W of peak output power, 40V, and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.