|Pulse width & Duty factor||Voltage
|2.856||2.856||500||11.8||60||12µs, 3%||50||Input & Output||PL64A1|
IGN2856S500 is a high power GaN transistor, specified for use under Class AB operation. This transistor offers 2.856 GHz of operating frequency, minimum of 500W of peak pulse power, 50V and 3% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.