IGN2856S500 High Power GaN Transistor Operating at 2.856 GHz
| Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 2.856 | 2.856 | 500 | 11.8 | 60 | 12µs, 3% | 50 | Input & Output | PL64A1 |
IGN2856S500 is a high power GaN transistor, specified for use under Class AB operation. This transistor offers 2.856 GHz of operating frequency, minimum of 500W of peak pulse power, 50V and 3% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
FEATURES
- GaN on SiC HEMT Technology
- 500W Output Power
- Class AB Operation
- Pre-matched Internal Impedance -100% High Power RF Tested
- Negative Gate Voltage/Bias Sequencing
APPLICATIONS
- S-Band
EXPORT STATUS
- 3A001
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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