|Pulse width & Duty factor||Voltage
|2.9||3.2||75||14||55||100µs, 10%||45||Input & Output||PL32A1|
IGN2932M75 is a high power GaN transistor, best suited for S-band radar applications. Specified for use under Class AB operation, this transistor operates at 2.7-3.2 GHz of operating frequency, a minimum of 75W of peak output power, 45V, and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.