IGN3135M250 S-Band Radar Transistor Operating at 2.7-3.2 GHz at 250W

Frequency Low
Frequency High
Output Power
Pulse width & Duty factor Voltage
Matching Package
3.1 3.5 250 13 55 100µs, 10% 50 Input & Output PL44C1

Image for Integra Part Number IGN3135M250

Image for Integra Part Number IGN3135M250

IGN3135M250 is a high power GaN transistor, best suited for S-band radar applications. Specified for use under Class AB operation, this transistor operates at 3.1-3.5 GHz of operating frequency, a minimum of 250W of peak output power, 50V, and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.


  • GaN on SiC HEMT Technology
  • 250W Output Power
  • Class AB Operation
  • Pre-matched Internal Impedance
  • 100% High Power RF Tested
  • Negative Gate Voltage/Bias Sequencing


  • S-Band Radar


  • 3A001

For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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