|Pulse width & Duty factor||Voltage
|3.8||4.2||130||14||57||100µs, 2%||50||Input & Output||PL32A1|
IGN3842M130 is a high power GaN transistor, best suited for C-band radar applications. Specified for use under Class AB operation, this transistor operates at 3.8-4.2 GHz of operating frequency, a minimum of 130W of peak output power, 50V, and 2% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.