IGN450M160 High Power Radar Transistor Operating at 420-450 MHz

Frequency Low
Frequency High
Output Power
Pulse width & Duty factor Voltage
Matching Package
0.42 0.45 160 22 77 100µs, 10% 50 Input PL44C1

Image for Integra Part Number IGN450M160

IGN450M160 is a high power GaN transistor best suited for sub-1 GHz Radar applications. Specified for use under Class AB operation, this transistor offers 420-450 MHz of operating frequency, minimum of 160W of peak pulse power, 50V and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.


  • GaN on SiC HEMT Technology
  • 160W Output Power
  • Class AB Operation
  • Pre-matched Internal Impedance
  • 100% High Power RF Tested
  • Negative Gate Voltage/Bias Sequencing


  • Sub-1 GHz Radar


  • EAR99

For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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