IGN5259M80R2 C-Band Radar Transistor Operating at 5.2-5.9 GHz

Frequency Low
Frequency High
Output Power
Pulse width & Duty factor Voltage
Matching Package
5.2 5.9 80 13 45 300µs, 10% 50 Input & Output PL32A1

Image for Integra Part Number IGN5259M80R2

IGN5259M80R2 is a high power GaN transistor, best suited for C-band radar applications. Specified for use under Class AB operation, this transistor operates at 5.2-5.9 GHz of operating frequency, a minimum of 80W of peak output power, 50V, and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.


  • GaN on SiC HEMT Technology
  • 80W Output Power
  • Class AB Operation
  • Pre-matched Internal Impedance
  • 100% High Power RF Tested
  • Negative Gate Voltage/Bias Sequencing


  • C-Band Radar


  • 3A001

For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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