IGNP2729M1KW-GPS S-Band, GaN/SiC, RF Power Module
| Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Size |
|---|---|---|---|---|---|---|---|
| 2.7 | 2.9 | 1000 | 12 | 54 | 300µs Pulse Length, 10% Duty Cycle | 50 | 5.3 x 3.0 x 0.27 inch |
IGNP2729M1KW-GPS is a high power GaN-on-SiC RF power module that has been designed to suit the unique needs of S band radar systems. It operates over the full 2.7 - 2.9 GHz frequency range. Under 300μs, 10% duty cycle pulse conditions, it supplies a minimum of 1 kW of peak output power, with typically >12 dB of gain and 54% efficiency. It operates from a 50 V supply voltage.
FEATURES
- GaN on SiC HEMT Technology
- Output Power >1 kW
- Fully matched to 50Ω
- High Efficiency - up to 54%
- Incorporates Gate Pulsing & Sequencing (GPS) fully automatic, fail-safe bias circuitry
- 100% RF Tested under 300µs, 10% duty cycle pulse conditions
APPLICATIONS
- S-band Radar Systems
EXPORT STATUS
- TBD
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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