IGNP2729M1KW-GPS S-Band, GaN/SiC, RF Power Module

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width & Duty factor Voltage
(V)
Size
2.7 2.9 1000 12 54 300µs Pulse Length, 10% Duty Cycle 50 5.3 x 3.0 x 0.27 inch

Image for Integra Part Number IGNP2729M1KW-GPS

IGNP2729M1KW-GPS is a high power GaN-on-SiC RF power module that has been designed to suit the unique needs of S band radar systems. It operates over the full 2.7 - 2.9 GHz frequency range. Under 300μs, 10% duty cycle pulse conditions, it supplies a minimum of 1 kW of peak output power, with typically >12 dB of gain and 54% efficiency. It operates from a 50 V supply voltage.

FEATURES

  • GaN on SiC HEMT Technology
  • Output Power >1 kW
  • Fully matched to 50Ω
  • High Efficiency - up to 54%
  • Incorporates Gate Pulsing & Sequencing (GPS) fully automatic, fail-safe bias circuitry
  • 100% RF Tested under 300µs, 10% duty cycle pulse conditions

APPLICATIONS

  • S-band Radar Systems

EXPORT STATUS

  • TBD


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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