IGT2729M300 S-Band, GaN/SiC, 50-Ohm RF Power Transistor

Frequency Low
Frequency High
Output Power
Pulse width & Duty factor Voltage
2.7 2.9 300 16 70 150µs 10% 50 50 PM67A1

Image for Integra Part Number IGT2729M300

IGT2729M300 is a high power GaN-on-SiC RF power transistor that is fully matched to 50Ω at both the input and output. It supplies a minimum of 300W of peak output power, with typically 16dB of gain and 70% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid. 


  • GaN on SiC HEMT Technology
  • RoHS and REACH Compliant
  • Output Power 300W
  • Fully matched to 50Ω, at both input and output
  • High Efficiency - 70% typical
  • 100% RF Tested Under 150µs, 10% duty cycle pulse conditions


  • S-Band Radar Systems


  • EAR99

For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

Request A Model

Please enter the information to the left and we will email the requested model for Product: IGT2729M300.

If you wish to receive product updates and news from Integra, please check the appropriate box on the form.

Thank you for choosing Integra.


Get our Updates:

Privacy Policy

Integra Technologies
© 1997 - 2019 Integra Technologies, Inc. All Rights Reserved
Get our Updates