IGT2729M300 S-Band, GaN/SiC, 50-Ohm RF Power Transistor
| Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching Ohm |
Package |
|---|---|---|---|---|---|---|---|---|
| 2.7 | 2.9 | 300 | 16 | 70 | 150µs 10% | 50 | 50 | PM67A1 |
IGT2729M300 is a high power GaN-on-SiC RF power transistor that is fully matched to 50Ω at both the input and output. It supplies a minimum of 300W of peak output power, with typically 16dB of gain and 70% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.
FEATURES
- GaN on SiC HEMT Technology
- RoHS and REACH Compliant
- Output Power 300W
- Fully matched to 50Ω, at both input and output
- High Efficiency - 70% typical
- 100% RF Tested Under 150μs, 10% duty cycle pulse conditions
APPLICATIONS
- S-Band Radar Systems
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
