IGT2729M300 S-Band, GaN/SiC, 50-Ohm RF Power Transistor

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width & Duty factor Voltage
(V)
Matching
Ohm
Package
2.7 2.9 300 16 70 150μs 10% 50 50 PM67A1

IGT2729M300

IGT2729M300 is a high power GaN-on-SiC RF power transistor that is fully matched to 50Ω at both the input and output. It supplies a minimum of 300W of peak output power, with typically 16dB of gain and 70% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid. 

FEATURES

  • GaN on SiC HEMT Technology
  • RoHS and REACH Compliant
  • Output Power 300W
  • Fully matched to 50Ω, at both input and output
  • High Efficiency - 70% typical
  • 100% RF Tested Under 150μs, 10% duty cycle pulse conditions

APPLICATIONS

  • S-Band Radar Systems

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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