|Pulse width & Duty factor||Voltage
IGT2729M300 is a high power GaN-on-SiC RF power transistor that is fully matched to 50Ω at both the input and output. It supplies a minimum of 300W of peak output power, with typically 16dB of gain and 70% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.