IGT2731M130 S-Band, GaN/SiC, 50-Ohm RF Power Transistor

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width & Duty factor Voltage
(V)
Matching
Ohm
Package
2.7 3.1 130 16 62 300µs, 10% 50 50 PL44A1

Image for Integra Part Number IGT2731M130

IGT2731M130 and IGT2731M130S are high power GaN-on-SiC RF power transistors that are fully matched to 50Ω at both the input and output. They supply a minimum of 130W of peak output power, with typically >16dB of gain and 62% efficiency. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

  • GaN on SiC HEMT Technology
  • Output Power 130W
  • Fully matched to 50Ω at both input and output
  • High Efficiency - 62% typical
  • 100% RF Tested Under 300ms, 10% duty cycle pulse conditions
  • RoHS and REACH Compliant
  • IGT2731M130 has a bolt-down flange, IGT2731M130S has an ear-less flange for solder attach only

APPLICATIONS

  • S-Band Radar

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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