|Pulse width & Duty factor||Voltage
IGT2731M130 and IGT2731M130S are high power GaN-on-SiC RF power transistors that are fully matched to 50Ω at both the input and output. They supply a minimum of 130W of peak output power, with typically >16dB of gain and 62% efficiency. They operate from a 50 V supply voltage. For optimal thermal efficiency, the transistors are housed in a metal-based package with an epoxy-sealed ceramic lid.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.