IGT3135L100 S-Band, GaN/SiC, 50-Ohm RF Power Transistor

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width & Duty factor Voltage
(V)
Matching
Ohm
Package
3.1 3.5 100 14 45 40ms, 50% 32 50 PM67A1

IGT3135L100

IGT3135L100 is a high power GaN-on-SiC RF power transistor that is fully matched to 50Ω at both the input and output. It supplies 100W of peak output power, with typically 14dB of gain and 45% efficiency. It operates from a 32 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxysealed ceramic lid.

FEATURES

  • GaN on SiC HEMT Technology
  • 100% RF Tested Under 40ms, 50% duty cycle pulse conditions
  • RoHS and REACH Compliant
  • Output Power =100W
  • Fully matched to 50Ω at both input and output
  • High Efficiency - 45% typical

APPLICATIONS

  • S-band Radar Systems

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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