|Pulse width & Duty factor||Voltage
IGT3135L100 is a high power GaN-on-SiC RF power transistor that is fully matched to 50Ω at both the input and output. It supplies 100W of peak output power, with typically 14dB of gain and 45% efficiency. It operates from a 32 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxysealed ceramic lid.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.