IGT3135M135 GaN Transistor for S-Band Radar Operating at 3.1-3.5 GHz

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width & Duty factor Voltage
(V)
Matching
Ohm
Package
3.1 3.5 135 13.5 55 300µs, 10% 46 50 PL44A1

Image for Integra Part Number IGT3135M135

FEATURES

  • GaN on SiC HEMT Technology
  • 135W Output Power
  • Fully-matched Internal Impedance
  • 100% High Power RF Tested
  • Class AB Operation
  • Negative Gate Voltage/Bias Sequencing

APPLICATIONS

  • S-Band Radar

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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