IGT3135M135 GaN Transistor for S-Band Radar Operating at 3.1-3.5 GHz
| Frequency Low (GHz) | Frequency High (GHz) | Output Power (W) | Gain (dB) | Efficiency (%) | Pulse width & Duty factor | Voltage (V) | Matching: Ohm | Package |
|---|---|---|---|---|---|---|---|---|
| 3.10 | 3.50 | 135 | 14 | 55 | 300µs, 10% | 46 | 50 | PL44A1 |
IGT3135M135 is a high power GaN transistor, best suited for S-band radar applications. Specified for use under Class AB operation, this transistor operates at 3.1-3.5 GHz of operating frequency, a minimum of 135W of peak output power, 300µs pulse width, 46V and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
FEATURES
- GaN on SiC HEMT Technology
- 135W Output Power
- Fully-matched Internal Impedance
- 100% High Power RF Tested
- Class AB Operation
- Negative Gate Voltage/Bias Sequencing
APPLICATIONS
- S-Band Radar
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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