IGT5259CW50 C-Band, GaN/SiC, RF Power Transistor

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width & Duty factor Voltage
(V)
Matching
Ohm
Package
5.2 5.9 50 13 50 CW 28 50 PL44C2

Image for Integra Part Number IGT5259CW50

Image for Integra Part Number IGT5259CW50

FEATURES

  • GaN on SiC HEMT Technology
  • Output Power >50 W
  • Fully matched to 50Ω Impedance at both Input and Output
  • High Efficiency - up to 50%
  • 100% RF Tested
  • RoHS and REACH Compliant
  • IGT5259CW50 has a bolt-down flange, IGT5259CW50S is the earless flange option

APPLICATIONS

  • C-band Radar Systems

EXPORT STATUS

  • 3A001


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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