IGT5259L50 GaN Transistor for C-Band Radar Operating at 5.2-5.9 GHz

Frequency Low
Frequency High
Output Power
Pulse width & Duty factor Voltage
5.2 5.9 50 14 43 1ms, 15% 50 50 PL44A1

Image for Integra Part Number IGT5259L50

IGT5259L50 is a high power GaN transistor, best suited for C-band radar applications. Specified for use under Class AB operation, this transistor operates at 5.2-5.9 GHz of operating frequency, a minimum of 50W of peak output power, 50V and 15% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.


  • GaN on SiC HEMT Technology
  • 50W Output Power
  • Fully-matched Internal Impedance
  • 100% High Power RF Tested
  • Class AB Operation
  • Negative Gate Voltage/Bias Sequencing


  • C-Band Radar


  • EAR99

For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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