IGT9010M50 X-Band, GaN/SiC, RF Power Transistor

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width & Duty factor Voltage
(V)
Matching
Ohm
Package
9 10 50 12 43 100µs Pulse Length, 10% Duty Cycle 50 50 PFC77B1

Image for Integra Part Number IGT9010M50

IGT9010M50 is a high power GaN-on-SiC RF power transistor that has been designed to suit the unique needs of X-Band Radar Systems. It operates over the full bandwidth of 9.0 - 10.0 GHz. Under 200µs, 10% duty cycle pulse conditions, it supplies 50 W of peak output power, with an associated 10 dB of gain and 38% efficiency. It operates from a 50 V supply voltage. For optimal thermal efficiency, the transistor is housed in a metal-based package with an epoxy-sealed ceramic lid.

FEATURES

  • GaN on SiC HEMT Technology
  • Output Power >50 W
  • Fully matched to 50 Ω Impedance at both Input and Output
  • High Efficiency - up to 43%
  • 100% RF Tested
  • RoHS and REACH Compliant

APPLICATIONS

  • X-band Radar Systems

EXPORT STATUS

  • 3A001


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

Request A Model

Please enter the information to the left and we will email the requested model for Product: IGT9010M50.

If you wish to receive product updates and news from Integra, please check the appropriate box on the form.

Thank you for choosing Integra.

Integra

Get our Updates:



Privacy Policy


Integra Technologies
© 1997 - 2019 Integra Technologies, Inc. All Rights Reserved
Get our Updates