IGT9010M50 X-Band Radar Transistor Operating at 9.0-10.0 GHz
| Frequency Low (GHz) | Frequency High (GHz) | Output Power (W) | Gain (dB) | Efficiency (%) | Pulse width & Duty factor | Voltage (V) | Matching: Ohm | Package |
|---|---|---|---|---|---|---|---|---|
| 9.00 | 10.00 | 50 | 10 | 37 | 100µs, 10% | 50 | 50 | PFC77A1 |
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IGT9010M50 is a high power GaN transistor, best suited for X-band radar applications. Specified for use under Class AB operating, this transistor operates at 9.0-10.0 GHz of operating frequency, a minimum of 50W of peak output power, 50V and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
FEATURES
- GaN on SiC HEMT Technology
- 50W Output Power
- Fully-matched Internal Impedance
- 100% High Power RF Tested
- Class AB Operation
- Negative Gate Voltage/Bias Sequencing
APPLICATIONS
- X-Band Radar
EXPORT STATUS
- 3A001
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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