Frequency Low (GHz) | Frequency High (GHz) | Output Power (W) | Gain (dB) | Efficiency (%) | Pulse width & Duty factor | Voltage (V) | Matching: Ohm | Package |
---|---|---|---|---|---|---|---|---|
9.00 | 10.00 | 50 | 10 | 37 | 100µs, 10% | 50 | 50 | PFC77A1 |
IGT9010M50 is a high power GaN transistor, best suited for X-band radar applications. Specified for use under Class AB operating, this transistor operates at 9.0-10.0 GHz of operating frequency, a minimum of 50W of peak output power, 50V and 10% duty factor. Assembled via chip and wire technology, utilizing gold metallization, this unit is housed in a metal-based package and sealed with a ceramic-epoxy lid.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.