ILD0912M150HV High Power LDMOS Transistor Operating at 150W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width & Duty factor Voltage
(V)
Matching Package
0.96 1.215 150 13 55 10µs, 10% 50 Input & Output PL84A1

Image for Integra Part Number ILD0912M150HV

ILD0912M150HV is a high power LDMOS transistor designed for avionics systems operating at 0.960 - 1.215 GHz. Operating at 10µs, 10% pulse conditions this LDMOS FET device supplies a minimum of 150 W of power across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters.

FEATURES

  • Silicon LDMOS FET
  • Matched to 50-ohms
  • 150W Output Power
  • 100% High Power RF Tested
  • Class AB Operation

APPLICATIONS

  • L-Band Avionics

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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