|Pulse width & Duty factor||Voltage
|0.96||1.215||60||17||48||10µs, 10%||30||Input & Output||PL44B1|
ILD0912M60 is a high power LDMOS transistor designed for the frequency band 0.960 - 1.215 GHz. Operating at 10us/10% pulse conditions this LDMOS FET device supplies a minimum of 60 W of power across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters.