Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching | Package |
---|---|---|---|---|---|---|---|---|
1.03 | 1.09 | 200 | 17 | 55 | 48x (32µs On, 18µs Off), 6.4% | 50 | Input | PL64A1 |
ILD1011L200HV is a high power LDMOS transistor designed for avionics systems operating at 1.03 - 1.09 GHz at ELM Mode S, 6.4% pulse conditions and 50V drain bias. This LDMOS FET device supplies a minimum of 200 W of power across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
Please enter the information to the left and we will email the requested model for Product: ILD1011L200HV.
If you wish to receive product updates and news from Integra, please check the appropriate box on the form.
Thank you for choosing Integra.