ILD1011L200HV High Power L-Band Transistor Supplying 200W
| Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 1.03 | 1.09 | 200 | 17 | 55 | 48x (32µs On, 18µs Off), 6.4% | 50 | Input | PL64A1 |
ILD1011L200HV is a high power LDMOS transistor designed for avionics systems operating at 1.03 - 1.09 GHz at ELM Mode S, 6.4% pulse conditions and 50V drain bias. This LDMOS FET device supplies a minimum of 200 W of power across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters.
FEATURES
- Silicon LDMOS FET
- Matched to 50-ohms
- 200W Output Power
- 100% High Power RF Tested
- Class AB Operation
APPLICATIONS
- L-Band Avionics
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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