ILD1011L200HV High Power L-Band Transistor Supplying 200W

Frequency Low
Frequency High
Output Power
Pulse width & Duty factor Voltage
Matching Package
1.03 1.09 200 17 55 48x (32µs On, 18µs Off), 6.4% 50 Input PL64A1

Image for Integra Part Number ILD1011L200HV

ILD1011L200HV is a high power LDMOS transistor designed for avionics systems operating at 1.03 - 1.09 GHz at ELM Mode S, 6.4% pulse conditions and 50V drain bias. This LDMOS FET device supplies a minimum of 200 W of power across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters.


  • Silicon LDMOS FET
  • Matched to 50-ohms
  • 200W Output Power
  • 100% High Power RF Tested
  • Class AB Operation


  • L-Band Avionics


  • EAR99

For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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