|Pulse width &|
|1.03||1.09||200||17||55||48x (32µs On, 18µs Off), 6.4%||50||Input||PL64A1|
ILD1011L200HV is a high power LDMOS transistor designed for avionics systems operating at 1.03 - 1.09 GHz at ELM Mode S, 6.4% pulse conditions and 50V drain bias. This LDMOS FET device supplies a minimum of 200 W of power across the instantaneous operating bandwidth. All devices are 100% screened for large signal RF parameters.