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ILD1011M1000HVE is a high power LDMOS transistor, designed for L-band avionics systems, operating at 1.03 GHz. While operating in Class AB mode under 50us, 2%, at VCC = 50V, this device supplies a minimum of 1000W of peak pulse power. This transistor utilizes a gold metallization system to achieve maximum reliability and is 100% screened for large signal RF parameters.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.