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ILD1011M15HV High Power L-Band Transistor Supplying 15W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
MatchingPackage
1.031.0915174650µs, 2%50OutputPL32A1
ILD1011M15HV

ILD1011M15HV is a high power LDMOS transistor designed for avionics systems operating at 1.030 - 1.090 MHz. Operating at 50µs, 2% pulse conditions this LDMOS FET device supplies a minimum of 15W of power. All devices are 100% screened for large signal RF parameters.

FEATURES

  • Silicon LDMOS FET
  • Matched to 50-ohms
  • 15W Output Power
  • 100% High Power RF Tested

APPLICATIONS


EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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