ILD1011M160HV High Power LDMOS Transistor Operating at 160W
| Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 1.03 | 1.03 | 160 | 17 | 53 | 50µs, 2% | 50 | Input | PL32A1 |
ILD1011M160HV is a high power LDMOS transistor, designed for avionics systems operating at 1.03 - 1.09 GHz. Operating at 50µs, 2% pulse conditions this LDMOS FET device supplies a minimum of 160W of power and is 100% screened for large signal RF parameters.
FEATURES
- Silicon LDMOS Technology
- 160W Output Power
- Pre-Matched Device
- 100% High Power RF Tested
- Class AB Operation
APPLICATIONS
- Avionics
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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