ILD1011M275HV High Power L-Band Transistor Supplying 275W

Frequency Low
Frequency High
Output Power
Pulse width & Duty factor Voltage
Matching Package
1.03 1.09 275 15 53 50µs, 2% 50 Input & Output PL84A1

Image for Integra Part Number ILD1011M275HV

ILD1011M275HV is a high power LDMOS transistor designed for avionics systems operating at 1.030 - 1.090 GHz. Operating at 50µs, 2% pulse conditions this LDMOS FET device supplies a minimum of 275W of power. All devices are 100% screened for large signal RF parameters.


  • Silicon LDMOS FET
  • Matched to 50-ohms
  • 275W Output Power
  • 100% High Power RF Tested
  • Class AB Operation


  • L-Band Avionics


  • EAR99

For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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