ILD1011M275HV High Power L-Band Transistor Supplying 275W
| Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 1.03 | 1.09 | 275 | 15 | 53 | 50µs, 2% | 50 | Input & Output | PL84A1 |
ILD1011M275HV is a high power LDMOS transistor designed for avionics systems operating at 1.030 - 1.090 GHz. Operating at 50µs, 2% pulse conditions this LDMOS FET device supplies a minimum of 275W of power. All devices are 100% screened for large signal RF parameters.
FEATURES
- Silicon LDMOS FET
- Matched to 50-ohms
- 275W Output Power
- 100% High Power RF Tested
- Class AB Operation
APPLICATIONS
- L-Band Avionics
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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