|Pulse width & Duty factor||Voltage
|1.03||1.09||275||15||53||50µs, 2%||50||Input & Output||PL84A1|
ILD1011M275HV is a high power LDMOS transistor designed for avionics systems operating at 1.030 - 1.090 GHz. Operating at 50µs, 2% pulse conditions this LDMOS FET device supplies a minimum of 275W of power. All devices are 100% screened for large signal RF parameters.