ILD1011M280HV High Power LDMOS Transistor Operating at 280W
| Frequency Low (GHz) | Frequency High (GHz) | Output Power (W) | Gain (dB) | Efficiency (%) | Pulse width & Duty factor | Voltage (V) | Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 1.03 | 1.03 | 280 | 16 | 51 | 50µs, 2% | 50 | Input | PL84A1 |
ILD1011M280HV is a high power LDMOS transistor, designed for avionics systems operating at 1.03 - 1.09 GHz. Operating at 50µs, 2% pulse conditions this LDMOS FET device supplies a minimum of 280W of power and is 100% screened for large signal RF parameters.
FEATURES
- Silicon LDMOS Technology
- 280W Output Power
- Pre-Matched Device
- 100% High Power RF Tested
- Class AB Operation
APPLICATIONS
- Avionics
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
.jpg)
