ILD1214L250 High Power L-Band Transistor Supplying 250W
| Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 1.2 | 1.4 | 250 | 13 | 60 | 1ms, 10% | 30 | Input & Output | PL124A1 |
ILD1214L250 is a high power pulsed LDMOS transistor designed for L-band systems operating at 1.2 - 1.4 GHz. Operating at a pulse width of 1ms with a duty factor of 10%, this dual MOSFET device supplies a minimum of 250W of peak pulse power across the instantaneous operating bandwidth. Fabricated with all gold metal contact, wire bonding and package for maximum reliability. All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth with no variable or external tuning.
FEATURES
- Silicon LDMOS FET
- Matched to 50-ohms
- 250W Output Power
- 100% High Power RF Tested
- Class AB Operation
APPLICATIONS
- L-Band Radar
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
Request A Model
Please enter the information to the left and we will email the requested model for Product: ILD1214L250.
If you wish to receive product updates and news from Integra, please check the appropriate box on the form.
Thank you for choosing Integra.
