ILD1214L250 High Power L-Band Transistor Supplying 250W

Frequency Low
Frequency High
Output Power
Pulse width & Duty factor Voltage
Matching Package
1.2 1.4 250 13 60 1ms, 10% 30 Input & Output PL124A1

Image for Integra Part Number ILD1214L250

ILD1214L250 is a high power pulsed LDMOS transistor designed for L-band systems operating at 1.2 - 1.4 GHz. Operating at a pulse width of 1ms with a duty factor of 10%, this dual MOSFET device supplies a minimum of 250W of peak pulse power across the instantaneous operating bandwidth. Fabricated with all gold metal contact, wire bonding and package for maximum reliability. All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth with no variable or external tuning.


  • Silicon LDMOS FET
  • Matched to 50-ohms
  • 250W Output Power
  • 100% High Power RF Tested
  • Class AB Operation


  • L-Band Radar


  • EAR99

For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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