Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching | Package |
---|---|---|---|---|---|---|---|---|
1.2 | 1.4 | 250 | 13 | 60 | 1ms, 10% | 30 | Input & Output | PL124A1 |
ILD1214L250 is a high power pulsed LDMOS transistor designed for L-band systems operating at 1.2 - 1.4 GHz. Operating at a pulse width of 1ms with a duty factor of 10%, this dual MOSFET device supplies a minimum of 250W of peak pulse power across the instantaneous operating bandwidth. Fabricated with all gold metal contact, wire bonding and package for maximum reliability. All devices are 100% screened for large signal RF parameters in the broadband RF test fixture across the entire specified operating bandwidth with no variable or external tuning.
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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