ILD1214M10 High Power L-Band Transistor Supplying 10W
| Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 1.2 | 1.4 | 10 | 13 | 48 | 200µs, 10% | 30 | Output | PL32A1 |
ILD1214M10 is a high power LDMOS transistor designed for L-band radar operating at 1.20 - 1.40 GHz. This LDMOS FET device under 300us, 10% pulse format supplies a minimum of 10-15W of peak pulse power. All devices are 100% screened for large signal parameters.
FEATURES
- Silicon LDMOS FET
- Matched to 50-ohms
- 10-15W Output Power
- 100% High Power RF Tested
- Class AB Operation
APPLICATIONS
- L-Band Radar
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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