ILD1214M10 High Power L-Band Transistor Supplying 10W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width & Duty factor Voltage
(V)
Matching Package
1.2 1.4 10 13 48 200µs, 10% 30 Output PL32A1

Image for Integra Part Number ILD1214M10

ILD1214M10 is a high power LDMOS transistor designed for L-band radar operating at 1.20 - 1.40 GHz. This LDMOS FET device under 300us, 10% pulse format supplies a minimum of 10-15W of peak pulse power. All devices are 100% screened for large signal parameters.

FEATURES

  • Silicon LDMOS FET
  • Matched to 50-ohms
  • 10-15W Output Power
  • 100% High Power RF Tested
  • Class AB Operation

APPLICATIONS

  • L-Band Radar

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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