ILD2731M60 High Power S-Band Transistor Supplying 30W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width & Duty factor Voltage
(V)
Matching Package
2.7 3.1 60 11 43 300µs, 10% 32 Input & Output PL32A1

Image for Integra Part Number ILD2731M60

ILD2731M60 is high power LDMOS transistor designed for S-band radar applicaitons operating over the 2.7 - 3.1 GHz instantaneous frequency band. Under 300us/20% pulsing conditions, it easily supplies a minimum of 60W of peak output power with 32V drain bias. Specified operation is with Class AB bias. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture.

FEATURES

  • Silicon LDMOS
  • Matched to 50-ohms
  • 60W Output Power
  • 100% High Power RF Tested
  • Class AB Operation

APPLICATIONS

  • S-Band Radar

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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