ILD3135M180 High Power S-Band Transistor Supplying 180W
| Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching | Package |
|---|---|---|---|---|---|---|---|---|
| 3.1 | 3.5 | 180 | 12 | 37 | 300µs, 10% | 32 | Input & Output | PL124A2 |
ILD3135M180 is a high power LDMOS transistor designed for S-band radar applications operating over the 3.1 - 3.5 GHz instantaneous frequency band. Under 300us / 10% pulsing conditions it supplies a minimum of 180 W of peak output power with 11dB gain typically. Specified operation is with Class AB bias. The single-ended broadband test fixture includes a temperature compensated bias network. All devices are 100% screened for large signal RF parameters in a fixed tuned broadband matching circuit / test fixture.
FEATURES
- Silicon LDMOS FET
- Matched to 50-ohms
- 180W Output Power
- 100% High Power RF Tested
- Class AB Operation
APPLICATIONS
- S-Band Radar
EXPORT STATUS
- 3A001
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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