ILT3035M30 Si-LDMOS Transistor for S-Band Radar Operating at 3.0-3.5 GHz
| Frequency Low (GHz) |
Frequency High (GHz) |
Output Power (W) |
Gain (dB) |
Efficiency (%) |
Pulse width & Duty factor | Voltage (V) |
Matching Ohm |
Package |
|---|---|---|---|---|---|---|---|---|
| 3 | 3.5 | 30 | 12 | 45 | 300µs, 10% | 32 | 50 | PL32A2 |
FEATURES
- Si-LDMOS FET Technology
- 30W Output Power
- Fully-matched Internal Impedance
- 100% High Power RF Tested
- Class AB Operation
- Negative Gate Voltage/Bias Sequencing
APPLICATIONS
- S-Band Radar
EXPORT STATUS
- EAR99
For package dimensions, evaluation board details, and complete test specifications, view the data sheet.
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