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IB1011M1100 High Power L-Band Transistor Supplying 1100W

Frequency Low
(GHz)
Frequency High
(GHz)
Output Power
(W)
Gain
(dB)
Efficiency
(%)
Pulse width &
Duty factor
Voltage
(V)
MatchingPackage
1.031.09110094432µs, 2%60Input & OutputP64A6
IB1011M1100

IB1011M1100 is a high power pulsed transistor designed for TCAS avionics systems operating at 1.03 and 1.09 GHz. While operating in Class C mode under 32µs, 2%, at VCC = 60V, this common base device supplies a minimum of 1100 W of peak pulse power. This transistor utilizes a gold metallization system to achieve maximum reliability. Emitter ballast resistance is incorporated on the active cell for optimum thermal distribution and maximum reliability. All devices are 100% screened for large signal RF parameters.

FEATURES

  • Silicon Bipolar
  • Matched to 50-ohms
  • 1100W Output Power
  • 100% High Power RF Tested
  • Class C Operation

APPLICATIONS

  • L-Band Avionics

EXPORT STATUS

  • EAR99


For package dimensions, evaluation board details, and complete test specifications, view the data sheet.

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