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Fully-matched (50-Ohm), GaN-on-SiC and LDMOS RF Power Transistors for S-, C-, and X-band Radar Systems
One level up from our pre-matched transistors, Integra offers a suite of space-saving and easy-to-implement fully matched (50-ohm) transistors. These ultra-efficient transistors enable you to achieve SWaP-C objectives by getting more functional use out of the transistor spot in your high power amplifier's (HPA's) block diagram. These solid-state RF Power Transistors are currently designed for RF and microwave applications from 2.7 GHz to 12 GHz (S-band, C-band, X-band) and offer output power up to 135 W. They are designed with thermally-efficient metallized packages, and provide efficiencies up to 55%. They are the ideal RF Power Transistors for advance pulsed radar design applications.
Model
Min Freq
(GHz)
Max Freq
(GHz)
Market
Min Output
Power (W)
Typical
Gain (dB)
Typical
Efficiency(%)
Pulse Width
& Duty Factor
Voltage
(V)
Matching
(Ohm)
Package
IB0810M210
0.87
0.99
210
8
59
300µs, 15%
36
Input
P44C3
ILD1011L110HV
1.03
1.09
Avionics
110
15
50
48x (32µs On, 18µs Off), 6.4%
50
Input
PL32A1
IDM30512CW50
0.03
0.512
50
10
50
CW
28
None
P44I1
IB2226M160
2.25
2.55
160
9
54
200µs, 10%
38
Input & Output
P32A5
ILD1011L20HV
1.03
1.09
Avionics
20
15
43
48x (32µs On, 18µs Off), 6.4%
50
None
PL32A1
IB0912L70
0.96
1.215
70
12
58
444x (7µs On, 6µs Off), 22.7%
44
Input & Output
P22A1
IB0912M70
0.96
1.215
70
11
64
10µs, 10%
50
Input & Output
P32C1
IB3000S60
3
3
60
12
52
12µs, 1%
40
Input & Output
P32A5
ILD1011M15HV
1.03
1.09
Avionics
15
17
46
50µs, 2%
50
Output
PL32A1
IB1011L15
1.03
1.09
15
15
67
48x (32µs On, 18µs Off), 6.4%
48
None
P32A5
IB2931MH55
2.9
3.1
55
9
49
100µs, 10%
36
Input & Output
P44C3
IB3135MH20
3.1
3.5
20
8
35
100µs, 10%
36
Input & Output
P44A3
I'm Whiskers
Gray
Watts
Gray
to
Gray
GHz
mixed
I'm Fluffy
Gray
Watts
Gray
to
Gray
GHz
mixed
I'm Ginger
Gray
Watts
Gray
to
Gray
GHz
mixed