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Fully-matched (50-Ohm), GaN-on-SiC and LDMOS RF Power Transistors for S-, C-, and X-band Radar Systems
One level up from our pre-matched transistors, Integra offers a suite of space-saving and easy-to-implement fully matched (50-ohm) transistors. These ultra-efficient transistors enable you to achieve SWaP-C objectives by getting more functional use out of the transistor spot in your high power amplifier's (HPA's) block diagram. These solid-state RF Power Transistors are currently designed for RF and microwave applications from 2.7 GHz to 12 GHz (S-band, C-band, X-band) and offer output power up to 135 W. They are designed with thermally-efficient metallized packages, and provide efficiencies up to 55%. They are the ideal RF Power Transistors for advance pulsed radar design applications.
Model
Min Freq
(GHz)
Max Freq
(GHz)
Market
Min Output
Power (W)
Typical
Gain (dB)
Typical
Efficiency(%)
Pulse Width
& Duty Factor
Voltage
(V)
Matching
(Ohm)
Package
IB2731MH110
2.7
3.1
110
9
45
200µs, 10%
36
Input & Output
P44C4
ILD1214EL40
1.2
1.4
Radar
40
14
42
16μs, 50%
30
Input
PL32A1
IB2731M110
2.7
3.1
110
9
50
200µs, 10%
36
Input & Output
P32A5
IB3135MH5
3.1
3.5
5
8
30
100µs, 10%
36
Input & Output
P44A3
IB450S300
0.45
0.45
300
11
63
30µs, 10%
40
Input
P44I1
IB2731MH25
2.7
3.1
25
10
43
200µs, 10%
36
Input & Output
P44L1
IB0810M50
0.87
0.99
50
8
52
300µs, 15%
36
Input
P44C3
IB3135MH45
3.1
3.5
45
9
42
100µs, 10%
36
Input & Output
P44C3
IB1214M6
1.2
1.4
6
9
47
100µs, 10%
28
Input
P32C1
IB0912M210
0.96
1.215
210
12
53
10µs, 10%
50
Input & Output
P44C7
IB1011S190
1.03
1.09
190
12
70
10µs, 1%
60
Input
P32A5
IDM500CW200
0.001
0.5
200
10
63
CW
28
None
P44I1
I'm Whiskers
Gray
Watts
Gray
to
Gray
GHz
mixed
I'm Fluffy
Gray
Watts
Gray
to
Gray
GHz
mixed
I'm Ginger
Gray
Watts
Gray
to
Gray
GHz
mixed