Products test page
Fully-matched (50-Ohm), GaN-on-SiC and LDMOS RF Power Transistors for S-, C-, and X-band Radar Systems
One level up from our pre-matched transistors, Integra offers a suite of space-saving and easy-to-implement fully matched (50-ohm) transistors. These ultra-efficient transistors enable you to achieve SWaP-C objectives by getting more functional use out of the transistor spot in your high power amplifier's (HPA's) block diagram. These solid-state RF Power Transistors are currently designed for RF and microwave applications from 2.7 GHz to 12 GHz (S-band, C-band, X-band) and offer output power up to 135 W. They are designed with thermally-efficient metallized packages, and provide efficiencies up to 55%. They are the ideal RF Power Transistors for advance pulsed radar design applications.
Model
Min Freq
(GHz)
Max Freq
(GHz)
Market
Min Output
Power (W)
Typical
Gain (dB)
Typical
Efficiency(%)
Pulse Width
& Duty Factor
Voltage
(V)
Matching
(Ohm)
Package
ILD3135M180
3.1
3.5
Radar
180
12
37
300µs, 10%
32
Input & Output
PL124A2
IB3000S200
3
3
200
9
48
12µs, 1%
40
Input & Output
P32A5
IB1011M70
1.03
1.09
70
9
65
128x (0.5µs On, 0.5µs Off), 1%
50
Input
P32A5
IB0912M500
0.96
1.215
500
8
56
10µs, 10%
50
Input & Output
P64A2
ILD1214M60
1.2
1.4
Radar
60
14
48
300µs, 10%
30
Input & Output
PL44B1
IB0607S1000
0.653
0.687
1000
9
55
20µs, 2%
50
Input
P64A6
IB1011M1000
1.03
1.09
1000
9
58
128x (0.5µs On, 0.5µs Off), 1%
50
Input
P64A6
IB0912M350
0.96
1.215
350
11
57
10µs, 10%
50
Input & Output
P54A5
IB2931MH155
2.9
3.1
155
9
42
100µs, 10%
36
Input & Output
P44C4
IB1011M1100
1.03
1.09
1100
9
44
32µs, 2%
60
Input & Output
P64A6
IB2226MH15
2.25
2.55
15
10
41
200µs, 10%
36
Input & Output
P44A3
IB1214M130
1.2
1.4
130
9
54
300µs, 10%
50
Input & Output
P32A5
I'm Whiskers
Gray
Watts
Gray
to
Gray
GHz
mixed
I'm Fluffy
Gray
Watts
Gray
to
Gray
GHz
mixed
I'm Ginger
Gray
Watts
Gray
to
Gray
GHz
mixed