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Fully-matched (50-Ohm), GaN-on-SiC and LDMOS RF Power Transistors for S-, C-, and X-band Radar Systems
One level up from our pre-matched transistors, Integra offers a suite of space-saving and easy-to-implement fully matched (50-ohm) transistors. These ultra-efficient transistors enable you to achieve SWaP-C objectives by getting more functional use out of the transistor spot in your high power amplifier's (HPA's) block diagram. These solid-state RF Power Transistors are currently designed for RF and microwave applications from 2.7 GHz to 12 GHz (S-band, C-band, X-band) and offer output power up to 135 W. They are designed with thermally-efficient metallized packages, and provide efficiencies up to 55%. They are the ideal RF Power Transistors for advance pulsed radar design applications.
Model
Min Freq
(GHz)
Max Freq
(GHz)
Market
Min Output
Power (W)
Typical
Gain (dB)
Typical
Efficiency(%)
Pulse Width
& Duty Factor
Voltage
(V)
Matching
(Ohm)
Package
ILD0912M400HV
0.96
1.215
Avionics
400
9
46
10µs, 10%
50
Input & Output
PL95A1
IB2729M5
2.7
2.9
5
8
42
100µs, 10%
32
Input & Output
P32C3
IB3134M100
3.1
3.4
100
10
42
300µs, 10%
36
Input & Output
P32A5
IB3135MH65
3.1
3.5
65
8
49
100µs, 10%
36
Input & Output
P44C4
IB3134M15
3.1
3.4
15
8
45
300µs, 10%
36
Input & Output
P32C3
ILD0912M15HV
0.96
1.215
Avionics
15
14
44
10µs, 10%
50
None
PL32A1
ILD2933M130
2.9
3.3
Radar
130
11
45
300µs, 10%
32
Input & Output
PL84A1
IB1011M350
1.03
1.09
350
11
72
128x (0.5µs On, 0.5µs Off), 1%
50
Input
P32A5
IDM165L650
0.125
0.167
650
9
62
1μs, 20%
34
None
P44I1
IB1012S10
1.025
1.15
10
11
43
10µs, 1%
50
Input & Output
P32C1
IB1416S650
1.45
1.55
650
8
46
8µs, 1%
50
Input & Output
P64A24
IB2729M25
2.7
2.9
25
9
45
100µs, 10%
36
Input & Output
P32C1
I'm Whiskers
Gray
Watts
Gray
to
Gray
GHz
mixed
I'm Fluffy
Gray
Watts
Gray
to
Gray
GHz
mixed
I'm Ginger
Gray
Watts
Gray
to
Gray
GHz
mixed