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Fully-matched (50-Ohm), GaN-on-SiC and LDMOS RF Power Transistors for S-, C-, and X-band Radar Systems
One level up from our pre-matched transistors, Integra offers a suite of space-saving and easy-to-implement fully matched (50-ohm) transistors. These ultra-efficient transistors enable you to achieve SWaP-C objectives by getting more functional use out of the transistor spot in your high power amplifier's (HPA's) block diagram. These solid-state RF Power Transistors are currently designed for RF and microwave applications from 2.7 GHz to 12 GHz (S-band, C-band, X-band) and offer output power up to 135 W. They are designed with thermally-efficient metallized packages, and provide efficiencies up to 55%. They are the ideal RF Power Transistors for advance pulsed radar design applications.
Model
Min Freq
(GHz)
Max Freq
(GHz)
Market
Min Output
Power (W)
Typical
Gain (dB)
Typical
Efficiency(%)
Pulse Width
& Duty Factor
Voltage
(V)
Matching
(Ohm)
Package
IB1214M55
1.2
1.4
55
9
47
100µs, 10%
40
Input
P32A5
IB2856S30
2.856
2.856
30
10
50
12µs, 3%
40
Input & Output
P32A5
IB1011L470
1.03
1.09
470
10
57
48x (32µs On, 18µs Off), 6.4%
48
Input
P64A2
IB1214M375
1.2
1.4
375
9
60
300µs, 10%
42
Input & Output
P64A28
ILD1214EL200
1.2
1.4
Radar
200
12
42
16μs, 50%
30
Input & Output
PL124A1
IB1214M150
1.2
1.4
150
8
50
100µs, 10%
40
Input & Output
P32A5
ILD1011L950HV
1.03
1.09
Avionics
950
16
55
48x (32µs On, 18µs Off), 6.4%
50
Input
PL124A1
IB450S500
0.45
0.45
500
10
68
30µs, 10%
40
Input
P64A2
ILD2731M60
2.7
3.1
Radar
60
11
43
300µs, 10%
32
Input & Output
PL32A1
IB1011M800
1.03
1.09
800
9
52
128x (0.5µs On, 0.5µs Off), 1%
50
Input
P64A2
IB0912L200
0.96
1.215
200
10
58
444x (7µs On, 6µs Off), 22.7%
44
Input & Output
P54A5
IB1011S1500
1.03
1.09
1300
10
50
10µs, 1%
60
Input
P64A6
I'm Whiskers
Gray
Watts
Gray
to
Gray
GHz
mixed
I'm Fluffy
Gray
Watts
Gray
to
Gray
GHz
mixed
I'm Ginger
Gray
Watts
Gray
to
Gray
GHz
mixed